4 December 2008 Novel embedded barrier layer materials for ArF non-topcoat immersion applications
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Proceedings Volume 7140, Lithography Asia 2008; 71402I (2008); doi: 10.1117/12.805299
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
With the decrease in pitch in the line/space patterning, micro-bridge defects have become the major defect in the immersion applications. As a result, reducing micro-bridge defect count is one of the key tasks for mass production of semiconductor devices using immersion lithography for both topcoat and non-topcoat processes. In this paper, we focus on the non-topcoat approach particularly the embedded barrier layer (EBL) technology. The advanced EBL materials discussed in this paper have demonstrated to be able to reduce total defect including micro-bridge defect count to the same level as that of a topcoat process. It was found that the developer solubility of the EBL materials in both bright and dark fields and the contrast of the EBL materials play important roles for reducing overall defectivity.
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Deyan Wang, Chunyi Wu, Cheng Bai Xu, George Barclay, Peter Trefonas, Shuji Dinglee, "Novel embedded barrier layer materials for ArF non-topcoat immersion applications", Proc. SPIE 7140, Lithography Asia 2008, 71402I (4 December 2008); doi: 10.1117/12.805299; https://doi.org/10.1117/12.805299
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KEYWORDS
Electron beam lithography

Photoresist materials

Photoresist developing

Polymers

Lithography

Thin film coatings

Electroluminescence

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