4 December 2008 The APC (Advanced Process Control) procedure for process window and CDU improvement using DBMs
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Proceedings Volume 7140, Lithography Asia 2008; 71403G (2008) https://doi.org/10.1117/12.804652
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
The downscaling of the feature size and pitches of the semi-conductor device requires enough process window and good CDU of exposure field for improvement of device characteristics and high yield. Recently several DBMs (Design Based Metrologies) are introduced for the wafer verification and feed back to for DFM and process control. The major applications of DBM are OPC feed back, process window qualification and advanced process control feed back. With these tools, since the applied tool in this procedure uses e-beam scan method with database of design layout like other ones, more precise and quick verification can be done. In this work the process window qualification procedure will be discussed in connection with EDA simulation results and then method for obtaining good CDU will be introduced. DoseMapperTM application has been introduced for better field CDU control, but it is difficult to fully correct large field with limited data from normal CD SEM methodology. New DBM has strong points in collecting lots of data required for large field correction with good repeatability (Intra / Inter field).
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Jung-Chan Kim, Jung-Chan Kim, Taehyeong Lee, Taehyeong Lee, Areum Jung, Areum Jung, Gyun Yoo, Gyun Yoo, Hyunjo Yang, Hyunjo Yang, Donggyu Yim, Donggyu Yim, Sungki Park, Sungki Park, Jaeyoung Seo, Jaeyoung Seo, Byoungjun Park, Byoungjun Park, Toshiaki Hasebe, Toshiaki Hasebe, Masahiro Yamamoto, Masahiro Yamamoto, } "The APC (Advanced Process Control) procedure for process window and CDU improvement using DBMs", Proc. SPIE 7140, Lithography Asia 2008, 71403G (4 December 2008); doi: 10.1117/12.804652; https://doi.org/10.1117/12.804652

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