2 December 2008 Characterizing semiconductor materials with terahertz radiation pulses
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Proceedings Volume 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6); 714205 (2008) https://doi.org/10.1117/12.816869
Event: Sixth International Conference on Advanced Optical Materials and Devices, 2008, Riga, Latvia
Abstract
Experimental techniques that exploit pulses of the electromagnetic radiation with characteristic spectra covering the frequency range between few hundreds GHz and few THz and their applications in the characterization of various semiconductor materials are reviewed. The list of material parameters that can be determined by using pulsed THz techniques includes, among other, carrier lifetimes, their energy and momentum relaxation times, inter-valley separation in the conduction band, and nonlinear optical susceptibilities of the material.
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A. Krotkus, A. Krotkus, R. Adomavičius, R. Adomavičius, V. Pačebutas, V. Pačebutas, "Characterizing semiconductor materials with terahertz radiation pulses", Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 714205 (2 December 2008); doi: 10.1117/12.816869; https://doi.org/10.1117/12.816869
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