2 December 2008 Formation of SiC - like layers on Si surface in contact with C6H5CH3 solution by UV laser irradiation
Author Affiliations +
Proceedings Volume 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6); 71420M (2008) https://doi.org/10.1117/12.815452
Event: Sixth International Conference on Advanced Optical Materials and Devices, 2008, Riga, Latvia
Abstract
The review of results of submicron surface layers formation is presented under ultraviolet (UV) N2 - laser (λ = 0.337 μm, tp = 5 ns) ablation of silicon target in liquid environment C6H5CH3. The morphological and deformation state of a near-surface Si layer was investigated by polarization modulation spectroscopy (PMS), atom force microscopy (AFM) and Raman spectra methods before and after irradiation. After irradiation AFM data shows the formation of submicron structures with hexagonal-like type of regularity on Si surface, PMS spectra indicates the increasing of refractive index, Raman spectroscopy reveals the broad band in the range 740-800 cm-1. All that facts allow us to assume the possibility of SiC-like layer formation on silicon monocrystal surface by laser stimulated diffusion of carbon atoms from liquid media. The surface morphology and composition of the irradiated surface varies considerable with the number of laser shots.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Yusupov, L. Fedorenko, O. Lytvyn, V. Yukhimchuk, "Formation of SiC - like layers on Si surface in contact with C6H5CH3 solution by UV laser irradiation", Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420M (2 December 2008); doi: 10.1117/12.815452; https://doi.org/10.1117/12.815452
PROCEEDINGS
4 PAGES


SHARE
Back to Top