2 December 2008 Lattice vibrations study of InxGa1-xAsySb1-y quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE
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Proceedings Volume 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6); 71420R (2008) https://doi.org/10.1117/12.815961
Event: Sixth International Conference on Advanced Optical Materials and Devices, 2008, Riga, Latvia
Abstract
The quaternary alloy InxGa1-xAsySb1-y highly doped with tellurium was grown on substrates of p-type GaSb in the direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of the binary compounds GaAs and (GaSb + InAs).
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J. Díaz-Reyes, E. López-Cruz, J. G. Mendoza-Alvarez, "Lattice vibrations study of InxGa1-xAsySb1-y quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE", Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420R (2 December 2008); doi: 10.1117/12.815961; https://doi.org/10.1117/12.815961
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