Paper
3 October 2008 High throughput measurement techniques for wafer level yield inspection of MEMS devices
O. Varela Pedreira, T. Lauwagie, J. De Coster, L. Haspeslagh, A. Witvrouw, I. De Wolf
Author Affiliations +
Proceedings Volume 7155, Ninth International Symposium on Laser Metrology; 71550M (2008) https://doi.org/10.1117/12.814724
Event: Ninth International Symposium on Laser Metrology, 2008, Singapore, Singapore
Abstract
This paper presents two distinct measurement systems that were custom-built for the parametric and functional yield inspection of MEMS devices on wafer-level. Throughput as well as accuracy was optimized by using automatic feature detection and data segmentation algorithms. Inaccuracies in stage positioning during scanning are compensated for by a grid detection algorithm. The analysis of the measurement data is performed in parallel with the ongoing measurements. The data analysis includes the detection, parameter extraction, analysis of failures or damage of a single device and the final stitching of the results in order to obtain a visual mapping of the measured arrays. The performance of both systems has been demonstrated using arrays of micromirrors as test vehicles.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. Varela Pedreira, T. Lauwagie, J. De Coster, L. Haspeslagh, A. Witvrouw, and I. De Wolf "High throughput measurement techniques for wafer level yield inspection of MEMS devices", Proc. SPIE 7155, Ninth International Symposium on Laser Metrology, 71550M (3 October 2008); https://doi.org/10.1117/12.814724
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Cited by 9 scholarly publications.
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KEYWORDS
Lithium

Image segmentation

Inspection

Semiconducting wafers

Microelectromechanical systems

Mirrors

Measurement devices

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