3 October 2008 The effects of post-annealing on pulse laser deposition of Zr0.8Sn0.2TiO4thin film on Si(100)
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Proceedings Volume 7155, Ninth International Symposium on Laser Metrology; 71552D (2008) https://doi.org/10.1117/12.814587
Event: Ninth International Symposium on Laser Metrology, 2008, Singapore, Singapore
Abstract
We demonstrate the pulse laser deposition (PLD) of zirconium tin titanium oxide (Zr0.8,Sn0.2)TiO4 (ZST) thin film on p-type Si (100)substrate by KrF excimer laser at room temperature, and the study of the effects of post-annealing to the optical and dielectric properties of the deposited ZST thin films. Deposition rate of ZST thin film at 0.3 Angstrom/pulse has been achieved with laser fluences of 1500 mJ/cm2. Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM) are used to study the effect of the crystalline properties of the deposited films on process parameters; such as laser fluence and annealing temperature. In addition, UV-Vis spectroscopy is used to characterize the optical properties of the deposited ZST films.
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C. T. Chuang, C. T. Chuang, Ming Chang Shih, Ming Chang Shih, M. H. Weng, M. H. Weng, } "The effects of post-annealing on pulse laser deposition of Zr0.8Sn0.2TiO4thin film on Si(100)", Proc. SPIE 7155, Ninth International Symposium on Laser Metrology, 71552D (3 October 2008); doi: 10.1117/12.814587; https://doi.org/10.1117/12.814587
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