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9 February 2009 Investigation of GaAs photoconductive switches triggered by 900nm semiconductor lasers
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Abstract
Experiment of a lateral semi-insulating GaAs photoconductive semiconductor switch (SI-GaAs PCSS) with different electrode gaps triggered by 900nm semiconductor laser is reported. With the biased voltage of 0.2KV~3.0KV, the linear electrical pulse is outputted by SI-GaAs PCSS. When laser energy is very low, the semi-insulating GaAs PCSS with 1.5mm electrode gap is triggered by laser pulse, the output electrical pulse samples is instable. When the energy of the laser increases, the amplitude and the width of the electrical pulse also increase. It indicates that a stable electrical pulse is obtained while laser energy is high. With the biased voltage of 2.8kV, the SI-GaAs PCSS with 3mm electrode gap is triggered by laser pulse about 10nJ in 200ns at 900nm. The SI-GaAs PCSS switches a electrical pulse with a voltage up to 80V. The absorption mechanism by Franz-Keldysh effect under high-intensity electric field and EL2 deep level defects is discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deming Ma, Wei Shi, Xiangrong Ma, Xinmei Wang, and Tao Pei "Investigation of GaAs photoconductive switches triggered by 900nm semiconductor lasers", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 715809 (9 February 2009); https://doi.org/10.1117/12.811987
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