A study of Hg1-xCdxTe surfaces processed using inductively coupled plasma with CH4/H2/N2/Ar mixture

Wenhong Zhou; Zhenhua Ye; Xiaoning Hu; Ruijun Ding; Li He

doi:10.1117/12.807068

9 February 2009 A study of Hg_1-xCd_xTe surfaces processed using inductively coupled plasma with CH₄/H₂/N₂/Ar mixture

Wenhong Zhou, Zhenhua Ye, Xiaoning Hu, Ruijun Ding, Li He

Proceedings Volume 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration; 71581B (2009) https://doi.org/10.1117/12.807068
Event: International Conference of Optical Instrument and Technology, 2008, Beijing, China

Abstract

Hydrogen-based dry plasmas, generated in inductively coupled plasma reactors have been demonstrated to be very effective in fabricating high fill-factor mesa of Hg_1-xCd _xTe multi-layer hetero-structure material for infrared focal plane array applications. To obtain reasonable dry etching process for Hg _1-xCd_xTe, it is essential to investigate the physical, chemical, and electrical characteristics of the surface. This paper explores the effect of varying the plasma process parameters on the surface of Hg _1-xCd_xTe. The surface chemical analysis was carried out using spot X-ray photoelectron spectroscopy (XPS), the surface roughness was measured by atomic force microscopy (AFM), and p-to-n type conversion depth was assessed by a reliable current-voltage test of a designed structure basing on material-chip technology concept and a convenient technology of cross-section surface potential imaging (SPM). At last, Hg _1-xCd_xTe etched surfaces with roughness low and mechanical or electrical damage free were achieved.

Citation Download Citation

Wenhong Zhou, Zhenhua Ye, Xiaoning Hu, Ruijun Ding, and Li He "A study of Hg_1-xCd_xTe surfaces processed using inductively coupled plasma with CH₄/H₂/N₂/Ar mixture", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71581B (9 February 2009); https://doi.org/10.1117/12.807068

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