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9 February 2009 A study of Hg1-xCdxTe surfaces processed using inductively coupled plasma with CH4/H2/N2/Ar mixture
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Abstract
Hydrogen-based dry plasmas, generated in inductively coupled plasma reactors have been demonstrated to be very effective in fabricating high fill-factor mesa of Hg1-xCd xTe multi-layer hetero-structure material for infrared focal plane array applications. To obtain reasonable dry etching process for Hg 1-xCd xTe, it is essential to investigate the physical, chemical, and electrical characteristics of the surface. This paper explores the effect of varying the plasma process parameters on the surface of Hg 1-xCd xTe. The surface chemical analysis was carried out using spot X-ray photoelectron spectroscopy (XPS), the surface roughness was measured by atomic force microscopy (AFM), and p-to-n type conversion depth was assessed by a reliable current-voltage test of a designed structure basing on material-chip technology concept and a convenient technology of cross-section surface potential imaging (SPM). At last, Hg 1-xCd xTe etched surfaces with roughness low and mechanical or electrical damage free were achieved.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenhong Zhou, Zhenhua Ye, Xiaoning Hu, Ruijun Ding, and Li He "A study of Hg1-xCdxTe surfaces processed using inductively coupled plasma with CH4/H2/N2/Ar mixture", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71581B (9 February 2009); https://doi.org/10.1117/12.807068
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