Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs

Tian Lan; Guoqiang Ni

doi:10.1117/12.812075

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9 February 2009 Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs

Tian Lan, Guoqiang Ni

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Proceedings Volume 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration; 71581K (2009) https://doi.org/10.1117/12.812075
Event: International Conference of Optical Instrument and Technology, 2008, Beijing, China

Abstract

This paper reports the design and preparation of ultra-fast photoconductive (PC) switch made from a 500 nm thick low temperature grown GaAs (LT-GaAs) on a transparent quartz glass substrate. After the procedures of photolithography, etching, evaporation etc., coplanar strip (CPS) transmission lines of Au/Pt with width and spacing of 10 μm and thickness of 600 nm are evaporated on the substrate of LT-GaAs. The photoconductive switch has ideal dark resistance, good I-V performance and photoelectric linearity under an exposure of weak light. The dark current is about 0.1 pA at a bias voltage of 10 V. The typical risetime of the photoconductive switch is 1.3 ps measured by pump-probe technique with a mode-locked Ti: sapphire laser with pulse width of 100 fs, wavelength of 800 nm, and frequency of 100 MHz.

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Tian Lan and Guoqiang Ni "Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71581K (9 February 2009); https://doi.org/10.1117/12.812075

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