3 February 2009 Research on the electro-induced birefringence in bulk crystal silicon
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Abstract
In this paper, the electro-induced birefringence based on Kerr effect and Franz-Keldysh effect in bulk silicon crystal at 1.3µm wavelengths has been measured, and the element of the third-order nonlinear susceptibility tensor, χ(3)xyxy, has been calculated. We find the change of refractive index induced by Franz-Keldysh effect is dependent on the polarization of the probing beam. Moreover, we deduce that the silicon crystal will become a single-axis crystal from an isotropy crystal when a silicon crystal is biased along [111] crystallographic direction, and the phenomena of birefringence willoccur as long as the light propagate perpendicularly to the optical axis of silicon crystal. In the experiment, we deduced the ifferences of refractive indices induced by Kerr effect and Franz-Keldysh effect were Δn = 5.49 x 10-16E2.50 and Δn/ = 2.42x10-16E2.50
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Yu-Hong Zhang, Yu-Hong Zhang, Hang Liu, Hang Liu, Zhan-Guo Chen, Zhan-Guo Chen, Gang Jia, Gang Jia, Ce Ren, Ce Ren, } "Research on the electro-induced birefringence in bulk crystal silicon", Proc. SPIE 7160, 2008 International Conference on Optical Instruments and Technology: Optoelectronic Measurement Technology and Applications, 71601R (3 February 2009); doi: 10.1117/12.806677; https://doi.org/10.1117/12.806677
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