27 February 2009 Recent developments in high-power short-wave mid-infrared semiconductor disk lasers
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Abstract
Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5μm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xμm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.
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D. Burns, D. Burns, J.-M. Hopkins, J.-M. Hopkins, A. J. Kemp, A. J. Kemp, B. Rösener, B. Rösener, N. Schulz, N. Schulz, C. Manz, C. Manz, K. Köhler, K. Köhler, M. Rattunde, M. Rattunde, J. Wagner, J. Wagner, } "Recent developments in high-power short-wave mid-infrared semiconductor disk lasers", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719311 (27 February 2009); doi: 10.1117/12.811977; https://doi.org/10.1117/12.811977
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