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27 February 2009 Intracavity-tripled optically pumped semiconductor laser at 355 nm
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Abstract
Optically-pumped semiconductor lasers provide efficient laser sources in the ultraviolet by intra-cavity nonlinear frequency tripling. A laser combining InGaAs gain media with LBO nonlinear crystals produces hundreds of mW CW at 355 nm. A compact package that combines thermal and opto-mechanical stability is the key to making this laser robust and manufacturable. A temperature controlled, monolithic aluminum base supports opto-mechanical mounts made from low expansion alloys and ceramics to create a resonator that can withstand substantial environmental excursions.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi-Ze Shu, Andrea L. Caprara, Jill D. Berger, Douglas W. Anthon, Hal Jerman, and Luis Spinelli "Intracavity-tripled optically pumped semiconductor laser at 355 nm", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719319 (27 February 2009); https://doi.org/10.1117/12.816073
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