28 February 2009 Lead-chalcogenide VECSELs on Si and BaF2 for 5 μm emission
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Proceedings Volume 7193, Solid State Lasers XVIII: Technology and Devices; 71931G (2009); doi: 10.1117/12.816359
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States
Abstract
Optically pumped VECSELs (vertical external cavity surface emitting lasers) with above 5 μm emission wavelength were fabricated on BaF2 and Si substrates. The active layer is just 1 - 2 μm thick PbTe or PbSe, and epitaxial PbEuTe/BaF2 or PbSrTe/EuTe Bragg mirrors are employed. On BaF2 substrates, output powers up to 260 mW pulsed and 3 mW cw at 100 K are obtained. The VECSEL presently operate up to 175 K with PbTe, and up to 215 K with PbSe active layers. On Si-substrates, maximum output was about 30 mW. There is room for considerable improvement with better adapted designs including improved heat-removal precautions.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Rahim, A. Khiar, F. Felder, M. Fill, D. Boye, H. Zogg, "Lead-chalcogenide VECSELs on Si and BaF2 for 5 μm emission", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71931G (28 February 2009); doi: 10.1117/12.816359; https://doi.org/10.1117/12.816359
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KEYWORDS
Mirrors

Silicon

Optical pumping

Quantum wells

Refractive index

Temperature metrology

Mid-IR

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