27 February 2009 Lead-chalcogenide VECSELs on Si and BaF2 for 5 μm emission
Author Affiliations +
Optically pumped VECSELs (vertical external cavity surface emitting lasers) with above 5 μm emission wavelength were fabricated on BaF2 and Si substrates. The active layer is just 1 - 2 μm thick PbTe or PbSe, and epitaxial PbEuTe/BaF2 or PbSrTe/EuTe Bragg mirrors are employed. On BaF2 substrates, output powers up to 260 mW pulsed and 3 mW cw at 100 K are obtained. The VECSEL presently operate up to 175 K with PbTe, and up to 215 K with PbSe active layers. On Si-substrates, maximum output was about 30 mW. There is room for considerable improvement with better adapted designs including improved heat-removal precautions.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Rahim, A. Khiar, F. Felder, M. Fill, D. Boye, H. Zogg, "Lead-chalcogenide VECSELs on Si and BaF2 for 5 μm emission", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71931G (27 February 2009); doi: 10.1117/12.816359; https://doi.org/10.1117/12.816359

Back to Top