23 February 2009 High-power operation of 1cm laser diode bars on funryu heat sink cooled by fluorinated-refrigerant
Author Affiliations +
We investigated the properties of fluorinated refrigerants for high-power laser diode bars mounted on a funryu heat sink. The thermal conductivity of fluorinated refrigerants is about ten times lower than that of water, but they are less corrosive to funryu heat sinks. Using 3M's "Fluorinet" FC77 and "Novec" HFE-7300 and comparing them with water as refrigerants, we developed a new fluorinated refrigerant cooling device that is suitable for removing heat from highpower LDs and LD modules. This device achieved CW light-output power from a 1-cm LD bar equivalent to that for a cooling device using ion-exchange water. With HFE-7300 as the refrigerant, we achieved over 100 W of output power at a drive current of CW 120 A and over 1.5 kW for a stacked-LD module operated at a constant current of 55 A in continuous-wave (CW) mode. High-power LD bars subjected to lifetime testing under these conditions have been successfully running for over 15,000 consecutive hours.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoru Oishi, Satoru Oishi, Hirofumi Miyajima, Hirofumi Miyajima, Noriyasu Suzuki, Noriyasu Suzuki, Tomoyuki Natsume, Tomoyuki Natsume, Toru Fujita, Toru Fujita, Koji Nishida, Koji Nishida, Hironobu Kurino, Hironobu Kurino, Ryusuke Okamoto, Ryusuke Okamoto, Nobuto Kageyama, Nobuto Kageyama, Nobutaka Suzuki, Nobutaka Suzuki, Takayuki Uchiyama, Takayuki Uchiyama, Hirofumi Kan, Hirofumi Kan, "High-power operation of 1cm laser diode bars on funryu heat sink cooled by fluorinated-refrigerant", Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71980E (23 February 2009); doi: 10.1117/12.808703; https://doi.org/10.1117/12.808703


70% efficient near 1kW single 1 cm laser diode bar...
Proceedings of SPIE (February 21 2011)
High-power BA Al-free InGaAsP/GaAs SCH SQW lasers
Proceedings of SPIE (August 18 1998)
Newly developed high-power laser diode bars
Proceedings of SPIE (February 08 2012)
Advances in high-power semiconductor diode lasers
Proceedings of SPIE (January 04 2008)
Highly reliable high power cw AlGaAs (808 nm) 1 cm...
Proceedings of SPIE (April 09 1995)

Back to Top