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23 February 2009 High wall-plug efficiency diode lasers with an Al-free active region at 975 nm
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Abstract
In this work, we present high-wall plug efficiency (WPE) diode lasers at 975 nm, which are based on an Al-free active region. On a 2 mm x 100 μm laser, we have obtained a high maximum wall-plug efficiency of 69% at 10°C CW. Based on the same structure, we have realised a 1-cm bar, mounted on an active submount, and which delivers 70 W CW, together with 67% wall-plug efficiency. By improving the laser structure, we have obtained a higher WPE of 70% on an uncoated 2 mm x 100 μm broad area laser. We also present a new structure with a reduced fast-axis far-field of only 34° at 1/e2.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Michel, M. Calligaro, Y. Robert, M. Lecomte, O. Parillaud, M. Krakowski, T. Westphalen, and M. Traub "High wall-plug efficiency diode lasers with an Al-free active region at 975 nm", Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981H (23 February 2009); https://doi.org/10.1117/12.808426
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