23 February 2009 High d/gamma values in diode laser structures for very high power
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Abstract
Record values for the rollover power and rollover linear power densities of 9xx nm devices, obtained by simultaneous scaling of length and d/Γ, are reported. The values for d/Γ lay in the range 0.8 μm to 1.2 μm with corresponding cavity lengths from 3.5 mm to 5 mm. The transversal structures were asymmetric, with a higher refractive index on the n side. An optical trap was helpful in reducing the radiation extension on the p side and the overall thickness. The highest rollover linear power densities were 244 mW/μm for structures without an optical trap and 290 mW/μm for those that included an optical trap
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I. B. Petrescu-Prahova, I. B. Petrescu-Prahova, P. Modak, P. Modak, E. Goutain, E. Goutain, D. Silan, D. Silan, D. Bambrick, D. Bambrick, J. Riordan, J. Riordan, T. Moritz, T. Moritz, S. D. McDougall, S. D. McDougall, B. Qiu, B. Qiu, J. H. Marsh, J. H. Marsh, "High d/gamma values in diode laser structures for very high power", Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981I (23 February 2009); doi: 10.1117/12.810041; https://doi.org/10.1117/12.810041
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