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24 February 2009 Large-aperture excilamps for microelectronic applications
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Abstract
A windowless excilamp, a xenon excilamp with the high specific power of radiation and an air-cooling KrCl excilamp for microelectronic applications are described. The excilamps have the total radiating surface up to 900 cm2. The VUV specific average power of a windowless excilamp is 3 mW/cm2 and 5 mW/cm2 for argon (λ ~ 126 nm) and krypton (λ~146 nm) accordingly at distance of 3 cm from the emitting surface. The xenon excilamp (λ ~ 172 nm) has 50 W of the average total VUV power and 120 mW/cm2 of density and the large-aperture air-cooling KrCl (λ ~222 nm) excilamp has 30 mW/cm2 of the radiation density and the radiation homogeneity 12 %.
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Dmitry V. Schitz, Mikhail I. Lomaev, Victor S. Skakun, and Victor F. Tarasenko "Large-aperture excilamps for microelectronic applications", Proc. SPIE 7201, Laser Applications in Microelectronic and Optoelectronic Manufacturing VII, 720119 (24 February 2009); https://doi.org/10.1117/12.807822
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