24 February 2009 Optical characterization of the heat-affected zone in laser patterning of thin film a-Si:H
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In this paper we present an original approach to estimate the heat affected zone in laser scribing processes for photovoltaic applications. We used high resolution IR-VIS Fourier transform spectrometry at micro-scale level for measuring the refractive index variations at different distances from the scribed line, and discussing then the results obtained for a-Si:H layers irradiated in different conditions that reproduce standard interconnection parameters. In order to properly assess the induced damage by the laser process, these results are compared with measurements of the crystalline state of the material using micro-Raman techniques. Additionally, the authors give details about how this technique could be used to feedback the laser process parametrization in monolithic interconnection of thin film photovoltaic devices based on a-Si:H.
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Carlos L. Molpeceres, Carlos L. Molpeceres, Monica Colina, Monica Colina, Miguel Holgado, Miguel Holgado, Miguel Morales, Miguel Morales, Isabel Sanchez-Aniorte, Isabel Sanchez-Aniorte, Sara Lauzurica, Sara Lauzurica, Juan J. Garcia-Ballesteros, Juan J. Garcia-Ballesteros, José L. Ocaña, José L. Ocaña, "Optical characterization of the heat-affected zone in laser patterning of thin film a-Si:H", Proc. SPIE 7202, Laser-based Micro- and Nanopackaging and Assembly III, 72020R (24 February 2009); doi: 10.1117/12.809514; https://doi.org/10.1117/12.809514

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