23 February 2009 1/f noise in single-walled carbon nanotube films
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Abstract
We use Monte Carlo simulations and modeling to study the 1/f noise in CNT films as a function of device parameters and film resistivity. We consider noise sources due to both tube-tube junctions and nanotubes themselves. By comparing the simulation results with experimental data, we find that the noise generated by tube-tube junctions dominates the total CNT film 1/f noise. We then systematically study the effect of device length, device width and film thickness on the 1/f noise scaling in CNT films. Our results show that the noise amplitude depends strongly on device dimensions and on the film resistivity, following a power-law relationship near the percolation threshold. Despite its relative simplicity, our computational approach explains the experimentally observed 1/f noise scaling in CNT films. Since 1/f noise is a more sensitive measure of percolation than resistivity, these simulations will help improve the performance of CNT film sensors at the micro-nano interface, where noise is an important figure of merit.
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Ashkan Behnam, Ashkan Behnam, Gijs Bosman, Gijs Bosman, Ant Ural, Ant Ural, } "1/f noise in single-walled carbon nanotube films", Proc. SPIE 7204, Micromachining and Microfabrication Process Technology XIV, 72040J (23 February 2009); doi: 10.1117/12.807407; https://doi.org/10.1117/12.807407
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