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23 February 2009 Application of Si LEDs (450nm-750nm) in CMOS integrated circuitry-based MOEMS: simulation and analysis
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Abstract
This paper discusses the simulation, development and potential application of Si LEDs in pre-specified complementary metal oxide semiconductors (CMOS) integrated circuit structures in the wavelength range of 450nm - 750nm. A MONTE CARLO simulation technique was developed in which the optical wave propagation phenomena as relevant in CMOS structures were continuously updated as the optical ray progresses through the structure. Refractive index of the material, layers thickness and structure curvatures were all incorporated as ray propagation parameters. By using a multi-ray simulation approach, the overall propagation phenomena wrt refraction, reflection, scattering, and intensities could be evaluated in globular context in any complex CMOS integrated circuit structure in a progressive way. MATLAB software was used as a mathematical capable and programmable language to develop the dedicated software evaluation tool. Subsequently, some first iteration, conceptual, applications of MOEMS structures are demonstrated as implemented in Si CMOS integrated circuitry, utilizing Si InAva LEDs and silicon detectors.
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Lukas W. Snyman, Kingsley A. Ogudo, Monuko du Plessis, and Gustav Udahemuka "Application of Si LEDs (450nm-750nm) in CMOS integrated circuitry-based MOEMS: simulation and analysis", Proc. SPIE 7208, MOEMS and Miniaturized Systems VIII, 72080C (23 February 2009); https://doi.org/10.1117/12.808551
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