Front Matter
Proc. SPIE 7211, Front Matter: Volume 7211, 721101 (10 March 2009); doi: 10.1117/12.824583
Wide-Bandgap LEDs and Thermoelectric Devices
Proc. SPIE 7211, Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors, 721103 (24 February 2009); doi: 10.1117/12.809079
Physics of Semiconductor Lasers with Optical Injection and Optical Feedback, and Diode Laser Frequency Stabilization
Proc. SPIE 7211, Sensitivity of semiconductor lasers to coherent and noisy optical injection: towards instability-based laser sensors, 721105 (24 February 2009); doi: 10.1117/12.816945
Proc. SPIE 7211, Characteristics of the frequency-locked states generated by a semiconductor laser under periodical optical injection and their applications in frequency conversion, 721106 (24 February 2009); doi: 10.1117/12.808147
Proc. SPIE 7211, Modulation response of an injection locked quantum-dash Fabry Perot laser at 1550nm, 721107 (24 February 2009); doi: 10.1117/12.809533
Proc. SPIE 7211, Systematic investigation of the alpha parameter influence on the critical feedback level in QD lasers, 721108 (24 February 2009); doi: 10.1117/12.809664
Proc. SPIE 7211, Oscillation frequency stabilization of a semiconductor laser by an indirect modulation method using the Faraday effect, 72110A (24 February 2009); doi: 10.1117/12.808803
Minisymposium on Single Photon Emitters I
Proc. SPIE 7211, Theory and design of chip-based quantum light sources using planar photonic crystals, 72110B (24 February 2009); doi: 10.1117/12.816146
Proc. SPIE 7211, Quantum dots in photonic crystals: from single photon sources to single photon nonlinear optics, 72110D (24 February 2009); doi: 10.1117/12.816153
Minisymposium on Single Photon Emitters II
Proc. SPIE 7211, Electrically driven room temperature operation of a single quantum dot emitter, 72110G (24 February 2009); doi: 10.1117/12.808165
Minisymposium on Single Photon Emitters III
Proc. SPIE 7211, Deterministic coupling of site-selected InAs/InP quantum dots to 2D photonic crystal microcavities, 72110H (24 February 2009); doi: 10.1117/12.816143
Proc. SPIE 7211, One-by-one coupling of single photon emitters to high-Q modes of optical microresonators, 72110K (24 February 2009); doi: 10.1117/12.816949
Photovoltaic Devices
Proc. SPIE 7211, Physics of quantum well solar cells, 72110L (24 February 2009); doi: 10.1117/12.816946
Proc. SPIE 7211, Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells, 72110M (24 February 2009); doi: 10.1117/12.808335
Proc. SPIE 7211, Ray racing techniques applied to the modelling of fluorescent solar collectors, 72110N (24 February 2009); doi: 10.1117/12.810922
Physics of Low-Dimensional Structures and Devices
Proc. SPIE 7211, Electroluminescence in nanostructures of different dimensionalities: a comparative simulation study, 72110O (13 February 2009); doi: 10.1117/12.807829
Proc. SPIE 7211, High speed all optical logic gates based on InAs/GaAs quantum-dot semiconductor optical amplifiers, 72110P (24 February 2009); doi: 10.1117/12.802589
Proc. SPIE 7211, Fringing field effects in semiconductor nanowire double heterostructures, 72110Q (24 February 2009); doi: 10.1117/12.809320
Proc. SPIE 7211, Evolution of near-field electromagnetic interference by metallic nanostructures, 72110R (24 February 2009); doi: 10.1117/12.809901
Ring Cavity Lasers and Nonlinear Dynamics of Semiconductor Lasers
Proc. SPIE 7211, Microring-based devices for telecommunication applications, 72110S (24 February 2009); doi: 10.1117/12.816944
Proc. SPIE 7211, Synchronization of semiconductor laser on picosecond pulses, 72110T (24 February 2009); doi: 10.1117/12.809949
Proc. SPIE 7211, Analysis of rectangular ring resonator sensor with photonic crystal microcavity, 72110V (24 February 2009); doi: 10.1117/12.808902
Physics of Quantum Dot Lasers and Amplifiers
Proc. SPIE 7211, Modeling of quasi-supercontinuum laser linewidth and derivative characteristics of InGaAs quantum dot broadband laser, 72110X (24 February 2009); doi: 10.1117/12.808571
Proc. SPIE 7211, Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model, 72110Y (24 February 2009); doi: 10.1117/12.810171
Proc. SPIE 7211, Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures, 72110Z (24 February 2009); doi: 10.1117/12.808206
Proc. SPIE 7211, Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers, 721110 (24 February 2009); doi: 10.1117/12.808320
Quantum Cascade Lasers
Proc. SPIE 7211, Auger recombination, internal loss, and other processes in interband cascade lasers, 721111 (24 February 2009); doi: 10.1117/12.816951
Physics and Simulation of VCSELs and DFB Lasers
Proc. SPIE 7211, Modeling of tunnel junctions for current injection in vertical cavity surface emitting lasers (VCSELs), 721113 (24 February 2009); doi: 10.1117/12.808468
Proc. SPIE 7211, 20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions, 721114 (24 February 2009); doi: 10.1117/12.816947
Proc. SPIE 7211, Efficient 3D simulation of photonic crystal VCSELs, 721115 (24 February 2009); doi: 10.1117/12.810037
Proc. SPIE 7211, Time-dynamic simulations of DFB lasers in 2D, 721116 (24 February 2009); doi: 10.1117/12.809017
Ultrafast and Terahertz Nanophotonics, and Fiber Amplifiers
Proc. SPIE 7211, Ultra high-speed nanophotonics, 721117 (24 February 2009); doi: 10.1117/12.810880
Proc. SPIE 7211, Monolithic 1.58-micron InAs/InP quantum dash passively mode-locked lasers, 721118 (24 February 2009); doi: 10.1117/12.809640
Proc. SPIE 7211, Graphene under optical pumping: nonequilibrium distributions, population inversion, and terahertz lasing, 721119 (24 February 2009); doi: 10.1117/12.807794
Proc. SPIE 7211, Evolution of self-similar parabolic pulses in optical fiber amplifiers, 72111A (24 February 2009); doi: 10.1117/12.809861
Poster Session
Proc. SPIE 7211, Numerical simulation of 405-nm InGaN laser diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer, 72111B (24 February 2009); doi: 10.1117/12.808861
Proc. SPIE 7211, Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells, 72111D (24 February 2009); doi: 10.1117/12.808880
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