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24 February 2009 Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors
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The thermoelectric properties of AlGaN and InGaN semiconductors are analyzed. In our analysis, the thermal conductivities, electrical conductivities, Seebeck coefficients, and figure of merits (Z*T) of AlGaN and InGaN semiconductors are computed. The electron transports in AlGaN and InGaN alloys are analyzed by solving Boltzmann transport equation, taking into account the dominant mechanisms of energy-dependent electron scatterings. Virtual crystal model is implemented to simulate the lattice thermal conductivity from phonon scattering for both AlGaN and InGaN alloys. The calculated Z*T is as high as 0.15 for optimized InGaN alloy at temperature around 1000 K. For optimized AlGaN composition, the Z*T of 0.06-0.07 can be achieved. The improved thermoelectric performance of ternary alloys over binary alloys can be attributed to the reduced lattice thermal conductivity.
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Hua Tong, Hongping Zhao, Vincent A Handara, Juan A Herbsommer, and Nelson Tansu "Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 721103 (24 February 2009);

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