24 February 2009 Electrically driven room temperature operation of a single quantum dot emitter
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We present an electrically driven single quantum dot emitter that is adapted for operation at room temperature. Epitaxially grown CdSe quantum dots were embedded between ZnSSe/MgS barriers optimized with respect to both, high quantum efficiency and efficient current injection at elevated temperatures. Most important, electroluminescence from one single quantum dot is observed even at room temperature with a surprisingly low driving voltage of 2.6 V. This might be a key step for a single photon emitter operating under ambient conditions.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tilmar Kümmell, Tilmar Kümmell, Robert Arians, Robert Arians, Arne Gust, Arne Gust, Carsten Kruse, Carsten Kruse, Sergey Zaitsev, Sergey Zaitsev, Detlef Hommel, Detlef Hommel, Gerd Bacher, Gerd Bacher, } "Electrically driven room temperature operation of a single quantum dot emitter", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110G (24 February 2009); doi: 10.1117/12.808165; https://doi.org/10.1117/12.808165

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