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24 February 2009 Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells
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Abstract
Successions of dilute nitride-based III-V semiconductor staircase like superlattice structures are incorporated in the intrinsic region of common III-V p-i-n solar cells. The choices of material system and energy band design are tuned towards facilitating the collection of all photo-generated carriers while minimizing recombination losses. Band structure calculations including strain effects, band anti-crossing models and transfer matrix methods are used to theoretically demonstrate optimum conditions for enhanced vertical transport. High electron quantum tunneling escape probability, together with a free movement of quasi-3 D holes, is predicted here to result in enhanced PV device performance. Furthermore, the increase in electron effective mass due to the incorporation of N translates in enhanced absorptive properties, ideal for PV application.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Alemu and A. Freundlich "Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110M (24 February 2009); https://doi.org/10.1117/12.808335
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