24 February 2009 Fringing field effects in semiconductor nanowire double heterostructures
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This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al0.2Ga0.8N/GaN DH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Hu, Jun Hu, Yang Liu, Yang Liu, Cun-Zheng Ning, Cun-Zheng Ning, Robert Dutton, Robert Dutton, Sung-Mo Kang, Sung-Mo Kang, } "Fringing field effects in semiconductor nanowire double heterostructures", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110Q (24 February 2009); doi: 10.1117/12.809320; https://doi.org/10.1117/12.809320


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