Theoretical analysis of 1.55-&#956;m InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model

F. Grillot; K. Veselinov; M. Gioannini; R. Piron; E. Homeyer; J. Even; S. Loualiche; I. Montrosset

doi:10.1117/12.810171

24 February 2009 Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model

F. Grillot, K. Veselinov, M. Gioannini, R. Piron, E. Homeyer, J. Even, S. Loualiche, I. Montrosset

Author Affiliations +

Proceedings Volume 7211, Physics and Simulation of Optoelectronic Devices XVII; 72110Y (2009) https://doi.org/10.1117/12.810171
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Quantum dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor. The aim of this paper is to investigate the lasing spectra behaviour of InAs/InP(311B) QD lasers. In order to reach the standards of long-haul transmissions, 1.55μm InAs QD lasers grown on InP substrate have been developed. More particularly, it has been demonstrated that the use of the specific InP(113)B substrate orientation when combined with optimized growth techniques allows the growth of very small (4 nm high) and dense (up to 1011cm^-2) QD structures. Consequently, a model based on the multi-population rate equations (MPRE) taking into account many cavity longitudinal modes for the calculation of the entire emission spectrum has been developed. In order to include the inhomogeneous gain broadening of the QD ensemble, various dot populations, each characterized by a ground state (GS) and an excited state (ES) average energy level have been considered. It will be shown that the numerical results are in good agreement with the experimental ones, both for the case of the double laser emission and for the effects of the homogeneous broadening on the lasing spectra. This numerical investigation based on carrier dynamics is of prime importance for the optimization of low cost sources for optical telecommunications as well as for a further improvement of QD laser performances at 1.55-μm on InP substrate, as already demonstrated for InAs-GaAs QD lasers emitting at 1.3-μm.

Citation Download Citation

F. Grillot, K. Veselinov, M. Gioannini, R. Piron, E. Homeyer, J. Even, S. Loualiche, and I. Montrosset "Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110Y (24 February 2009); https://doi.org/10.1117/12.810171

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
11 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Indium arsenide

Semiconductor lasers

Carrier dynamics

Photons

Telecommunications

Laser damage threshold

Laser development

Show All Keywords

Keywords/Phrases

Search In:

Publication Years