24 February 2009 Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures
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Abstract
We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300 K to 20 K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The comparison shows that in the gain regime at high temperatures the recovery dynamics of the p-doped sample is slower than in the undoped device operating at the same modal gain, due to a reduced electron reservoir in the excited states. Conversely, at 20 K the initial gain dynamics is faster in the p-doped device due to hole-hole scattering.
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P. Borri, P. Borri, V. Cesari, V. Cesari, M. Rossetti, M. Rossetti, A. Fiore, A. Fiore, W. Langbein, W. Langbein, } "Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110Z (24 February 2009); doi: 10.1117/12.808206; https://doi.org/10.1117/12.808206
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