24 February 2009 Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells
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Abstract
Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.
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Bo-Ting Liou, Bo-Ting Liou, Miao-Chan Tsai, Miao-Chan Tsai, Chih-Teng Liao, Chih-Teng Liao, Sheng-Horng Yen, Sheng-Horng Yen, Yen-Kuang Kuo, Yen-Kuang Kuo, } "Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72111D (24 February 2009); doi: 10.1117/12.808880; https://doi.org/10.1117/12.808880
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