12 February 2009 Electrical doping for high performance organic light emitting diodes
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Abstract
Novel p-dopants of ReO3 and CuI, and an n-dopant of Rb2CO3 have been developed. Among many other p-dopants, ReO3 possesses superior characteristics of low temperature deposition, efficient charge generation and increasing the device lifetime. The absorption intensity of charge transfer complexes and current-voltage characteristics revealed that charge generation in p-doped hole transporting layers is more effective when the work function of the dopant is larger. High performance OLEDs have been fabricated using the p- and n-dopants, including the low driving voltage p-i-n phosphorescent OLEDs, high power efficiency of tandem OLEDs using ReO3 doped NPB/ReO3 (1 nm)/Rb2CO3 doped Bphen as the interconnection unit, and top emission OLEDs using CuI doped NPB as the hole injection layer from Ag electrode.
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Jang-Joo Kim, Jang-Joo Kim, Dong-Seok Leem, Dong-Seok Leem, Jae-Hyun Lee, Jae-Hyun Lee, } "Electrical doping for high performance organic light emitting diodes", Proc. SPIE 7213, Organic Photonic Materials and Devices XI, 721303 (12 February 2009); doi: 10.1117/12.815261; https://doi.org/10.1117/12.815261
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