Paper
6 February 2009 Sub-GHz operation of single-photon emitting diode at 1.55 μm
Toshiyuki Miyazawa, Toshihiro Nakaoka, Shigekazu Okumura, Shinnichi Hirose, Kazuya Takemoto, Motomu Takatsu, Tatsuya Usuki, Naoki Yokoyama, Yasuhiko Arakawa
Author Affiliations +
Abstract
We demonstrated sub-GHz operation of a single-photon-emitting diode at 1.55 μm using 80-ps-wide electrical pulses. A light-emitting diode (LED) with a quantum dot (QD) layer was fabricated into a nanoscale mesa structure with electrodes. The electroluminescence (EL) and radiative lifetime of a single exciton in the QD was directly determined to be 1.59 ns by time-resolved EL measurement. The single-exciton recombination time agrees with the radiative lifetime calculated with an eight-band kp model. The antibunching behavior of exciton radiative recombination in a currentinjected quantum dot was demonstrated at 1551.2 nm by Hanbury-Brown and Twiss-type photon correlation measurements. Device examination at a high drive rate by changing the delay time between two electrical pulses demonstrated that a QD LED can be used as source of sub-GHz single photons in the C-band triggered by current injection.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiyuki Miyazawa, Toshihiro Nakaoka, Shigekazu Okumura, Shinnichi Hirose, Kazuya Takemoto, Motomu Takatsu, Tatsuya Usuki, Naoki Yokoyama, and Yasuhiko Arakawa "Sub-GHz operation of single-photon emitting diode at 1.55 μm", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140U (6 February 2009); https://doi.org/10.1117/12.807431
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KEYWORDS
Excitons

Electroluminescence

Light emitting diodes

Indium arsenide

Diodes

Electrodes

Quantum dots

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