6 February 2009 Nonlinear THz response of n-type GaAs
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Abstract
Using a novel high-field THz source we performed various ultrafast experiments on n-type GaAs. Both nonlinear THz experiments driving resonantly the 1S-2P donor impurity transition and nonlinear transport experiments on free carriers in the conduction band of GaAs give new insights into the dynamics of localized and delocalized electrons surprisingly different from the well-known linear Drude theory.
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Michael Woerner, Michael Woerner, Willhelm Kuehn, Willhelm Kuehn, Peter Gaal, Peter Gaal, Klaus Reimann, Klaus Reimann, Thomas Elsaesser, Thomas Elsaesser, Rudolf Hey, Rudolf Hey, } "Nonlinear THz response of n-type GaAs", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140W (6 February 2009); doi: 10.1117/12.811485; https://doi.org/10.1117/12.811485
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