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6 February 2009 THz emission from coherent plasmons in InAs nanowires
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Abstract
We report the first observation of coherent plasmon emission of THz radiation from arrays of semiconductor nanowires. The THz signal strength from InAs nanowires is comparable to a planar substrate, indicating the nanowires are highly efficient emitters. This is explained by the preferential orientation of plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. Using a bulk Drude model, we identify the average donor density and mobility in the nanowires in a non-contact manner. Contact IV transconductance measurements provide order of magnitude agreement with values obtained from the THz spectra.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. V. Seletskiy, M. P. Hasselbeck, M. Sheik-Bahae, J. G. Cederberg, and A. A. Talin "THz emission from coherent plasmons in InAs nanowires", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140Y (6 February 2009); https://doi.org/10.1117/12.810875
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