Translator Disclaimer
6 February 2009 Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors
Author Affiliations +
Abstract
We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Wang, I. Cotoros, D. S. Chemla, X. Liu, J. K. Furdyna, J. Chovan, and I. E. Perakis "Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 721412 (6 February 2009); https://doi.org/10.1117/12.809945
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Spin dynamics and manipulation in GaMnAs alloys
Proceedings of SPIE (March 01 2010)
Mn-based ferromagnetic semiconductors
Proceedings of SPIE (June 30 2003)
Shubnikov-de Haas effect in II-V semiconducting compounds
Proceedings of SPIE (January 31 1992)
Nanophotonics devices based on magnetic materials
Proceedings of SPIE (January 20 2012)

Back to Top