6 February 2009 Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors
Author Affiliations +
Abstract
We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Wang, J. Wang, I. Cotoros, I. Cotoros, D. S. Chemla, D. S. Chemla, X. Liu, X. Liu, J. K. Furdyna, J. K. Furdyna, J. Chovan, J. Chovan, I. E. Perakis, I. E. Perakis, } "Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 721412 (6 February 2009); doi: 10.1117/12.809945; https://doi.org/10.1117/12.809945
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT


Back to Top