6 February 2009 Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors
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We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.
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J. Wang, J. Wang, I. Cotoros, I. Cotoros, D. S. Chemla, D. S. Chemla, X. Liu, X. Liu, J. K. Furdyna, J. K. Furdyna, J. Chovan, J. Chovan, I. E. Perakis, I. E. Perakis, } "Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 721412 (6 February 2009); doi: 10.1117/12.809945; https://doi.org/10.1117/12.809945


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