9 February 2009 A narrowband plasmonic terahertz detector with a monolithic hot electron bolometer
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Abstract
We have fabricated and characterized plasmonic terahertz detectors that integrate a voltage controlled planar barrier with a grating gated GaAs/AlGaAs high electron mobility transistor. These detectors exhibit a narrowband, tunable plasmonic response. Substantially increased responsivity is achieved by introducing an independently biased, narrow gate that produces a lateral potential barrier adjacent to the drain when biased to pinch-off. DC electrical characterization in conjunction with bias-dependent terahertz responsivity and time constant measurements indicate that a hot electron bolometric effect is the dominant response mechanism over a broad range of experimental conditions. The temperature dependence of the bolometric response is consistent with the energy relaxation time and absorption coefficient of a 2DEG. Rectification resulting from non-linear current-voltage characteristics also appears to contribute to the response. Additionally, we have begun investigating the operation of this device with the full grating gate biased to pinch-off to produce many detection elements in series.
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Gregory C. Dyer, Gregory C. Dyer, Jess D. Crossno, Jess D. Crossno, Greg R. Aizin, Greg R. Aizin, John Mikalopas, John Mikalopas, Eric A. Shaner, Eric A. Shaner, Michael C. Wanke, Michael C. Wanke, John L. Reno, John L. Reno, S. James Allen, S. James Allen, } "A narrowband plasmonic terahertz detector with a monolithic hot electron bolometer", Proc. SPIE 7215, Terahertz Technology and Applications II, 721503 (9 February 2009); doi: 10.1117/12.809619; https://doi.org/10.1117/12.809619
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