12 February 2009 Terahertz imaging with Si MOSFET focal-plane arrays
Author Affiliations +
We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-μm CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/√Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Lisauskas, A. Lisauskas, D. Glaab, D. Glaab, H. G. Roskos, H. G. Roskos, E. Oejefors, E. Oejefors, U. R. Pfeiffer, U. R. Pfeiffer, } "Terahertz imaging with Si MOSFET focal-plane arrays", Proc. SPIE 7215, Terahertz Technology and Applications II, 72150J (12 February 2009); doi: 10.1117/12.809552; https://doi.org/10.1117/12.809552

Back to Top