12 February 2009 Terahertz imaging with Si MOSFET focal-plane arrays
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Abstract
We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-μm CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/√Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.
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A. Lisauskas, A. Lisauskas, D. Glaab, D. Glaab, H. G. Roskos, H. G. Roskos, E. Oejefors, E. Oejefors, U. R. Pfeiffer, U. R. Pfeiffer, } "Terahertz imaging with Si MOSFET focal-plane arrays", Proc. SPIE 7215, Terahertz Technology and Applications II, 72150J (12 February 2009); doi: 10.1117/12.809552; https://doi.org/10.1117/12.809552
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