Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels

Arvydas Matulionis; Hadis Morkoç

doi:10.1117/12.802341

18 February 2009 Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels

Arvydas Matulionis, Hadis Morkoç

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721608 (2009) https://doi.org/10.1117/12.802341
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Non-equilibrium (hot) occupancy of longitudinal-optical (LO) phonon modes is considered for InAlN/AlN/GaN and related structures with two-dimensional electron gas (2DEG) channels located in GaN and subjected to high electric fields. The channel operation is found to depend critically on the LO-mode occupancy controlled by hot-phonon lifetime. The lifetime dependences on the occupancy and the 2DEG density are presented and discussed in terms of plasmon-assisted decay of hot-phonons. The optimal 2DEG density for the fastest removal of the LO-mode heat is estimated.

Citation Download Citation

Arvydas Matulionis and Hadis Morkoç "Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721608 (18 February 2009); https://doi.org/10.1117/12.802341

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