Growth of high-quality large GaN crystal by Na flux LPE method

F. Kawamura; M. Imade; M. Yoshimura; Y. Mori; Y. Kitaoka; T. Sasaki

doi:10.1117/12.807434

18 February 2009 Growth of high-quality large GaN crystal by Na flux LPE method

F. Kawamura, M. Imade, M. Yoshimura, Y. Mori, Y. Kitaoka, T. Sasaki

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72160B (2009) https://doi.org/10.1117/12.807434
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We have been developing the technology that enables us to grow high quality and large GaN single crystals for producing high quality GaN single crystal substrates using Na flux method. In 2005, we have succeeded in the growth of 2-inch GaN substrates with low dislocation density (< 105 cm^-2) by applying the Liquid Phase Epitaxy to the Na flux method. Recently, we reported that dislocation density lower than the order of 10⁴ cm^-2 and the growth rate more than 20 um/h is achievable in the Na flux LPE. This achievement was due to introducing some new techniques; such as thermal convection, mechanical stirring, addition of carbon additive, development of new growth apparatus and so on, to the Na flux LPE.

Citation Download Citation

F. Kawamura, M. Imade, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki "Growth of high-quality large GaN crystal by Na flux LPE method", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160B (18 February 2009); https://doi.org/10.1117/12.807434

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