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18 February 2009 Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy
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Abstract
The growths of droplet-free narrow-bandgap InN semiconductors on Ga-polar and N-polar GaN templates on c-plane sapphire substrates were performed by pulsed-MOVPE growth techniques. Under the optimum In-polar InN growth conditions, the carrier mobility and n-type carrier concentration were measured as 681 cm2/(V.sec) and 1.5×1019 cm-3, respectively. The room-temperature photoluminescence measurements of optimized In-polar grown by pulsed-MOVPE technique resulted in peak wavelength at 0.76 eV. The growth of N-polar InN grown on the N-polar GaN template is discussed and compared to that of the In-polar InN.
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Hongping Zhao, Hua Tong, Alexandra M. Driscoll, Muhammad Jamil, G. S. Huang, and Nelson Tansu "Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160L (18 February 2009); https://doi.org/10.1117/12.808695
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