Effect of ambient on electrical and optical properties of GaN

M. A. Reshchikov; M. Foussekis; A. A. Baski; H. Morkoç

doi:10.1117/12.812258

16 February 2009 Effect of ambient on electrical and optical properties of GaN

M. A. Reshchikov, M. Foussekis, A. A. Baski, H. Morkoç

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721614 (2009) https://doi.org/10.1117/12.812258
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Photoluminescence (PL) and surface photovoltage (SPV) of GaN layers were studied in vacuum and air ambient. SPV transients were measured with two set-ups: traditional Kelvin probe attached to an optical cryostat and atomic force microscope in contact potential mode. It is found that upward band bending in GaN decreases from its dark value of about 0.9 eV to about 0.3 eV under intense UV light and then gradually increases in air ambient (due to photoadsorption of oxygen) and decreases in vacuum (due to photodesorption of oxygen). Manifestations of such changes were observed as changes in PL intensity and in SPV (both increased in vacuum and decreased in air). The effects were sample-dependent.

Citation Download Citation

M. A. Reshchikov, M. Foussekis, A. A. Baski, and H. Morkoç "Effect of ambient on electrical and optical properties of GaN", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721614 (16 February 2009); https://doi.org/10.1117/12.812258

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