You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
One of the most desired features of the semiconductor blue/near UV laser diodes (LDs) is the possibility to obtain
high output powers from the devices. This can be realized by means of multi emitter structures. We demonstrate
the construction of violet blue multi-quantum-well (MQW) InGaN/GaN laser mini - bars, yet quite novel system
in nitride-based devices. It consists of three laser stripes (3 μm wide), closely spaced with 40 μm pitch. The
structures were fabricated on high pressure grown, low dislocation density substrates. Under cw operation
the measured spectra demonstrate sharp, almost single line emission (FWHM around 1.43 Å at λ = 406 nm).
Measurements of the optical far field pattern revealed that when operated below threshold the device was emitting
light from all three stripes, whereas during lasing we observed the optical mode only in the area of the middle
laser stripe. The behavior of optical mode suggests the formation of the so called supermode (coherent emission
from all three devices) which was observed also in case of structures fabricated with wider ridges (of 7 μm with
20 μm pitch).
The alert did not successfully save. Please try again later.
K. Holc, M. Leszczynski, T. Suski, R. Czernecki, H. Braun, U. Schwartz, P. Perlin, "Nitride laser diode arrays," Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721618 (16 February 2009); https://doi.org/10.1117/12.802758