Nitride laser diode arrays

K. Holc; M. Leszczynski; T. Suski; R. Czernecki; H. Braun; U. Schwartz; P. Perlin

doi:10.1117/12.802758

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16 February 2009 Nitride laser diode arrays

K. Holc, M. Leszczynski, T. Suski, R. Czernecki, H. Braun, U. Schwartz, P. Perlin

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Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721618 (2009) https://doi.org/10.1117/12.802758
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

One of the most desired features of the semiconductor blue/near UV laser diodes (LDs) is the possibility to obtain high output powers from the devices. This can be realized by means of multi emitter structures. We demonstrate the construction of violet blue multi-quantum-well (MQW) InGaN/GaN laser mini - bars, yet quite novel system in nitride-based devices. It consists of three laser stripes (3 μm wide), closely spaced with 40 μm pitch. The structures were fabricated on high pressure grown, low dislocation density substrates. Under cw operation the measured spectra demonstrate sharp, almost single line emission (FWHM around 1.43 Å at λ = 406 nm). Measurements of the optical far field pattern revealed that when operated below threshold the device was emitting light from all three stripes, whereas during lasing we observed the optical mode only in the area of the middle laser stripe. The behavior of optical mode suggests the formation of the so called supermode (coherent emission from all three devices) which was observed also in case of structures fabricated with wider ridges (of 7 μm with 20 μm pitch).

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K. Holc, M. Leszczynski, T. Suski, R. Czernecki, H. Braun, U. Schwartz, and P. Perlin "Nitride laser diode arrays", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721618 (16 February 2009); https://doi.org/10.1117/12.802758

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