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16 February 2009 Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
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Abstract
In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80%, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.
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H. C. Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, T. C. Lu, and S. C. Wang "Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161A (16 February 2009); https://doi.org/10.1117/12.808644
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