AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications

B. H. Chu; B. S. Kang; H. T. Wang; C. Y. Chang; T, Lele; Y. Tseng; A. Goh; A. Sciullo; W. S. Wu; J. N. Lin; B. P. Gila; S. J. Pearton; J. W. Johnson; E. L. Piner; K. J. Linthicum; F. Ren

doi:10.1117/12.802823

19 February 2009 AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications

B. H. Chu, B. S. Kang, H. T. Wang, C. Y. Chang, T, Lele, Y. Tseng, A. Goh, A. Sciullo, W. S. Wu, J. N. Lin, B. P. Gila, S. J. Pearton, J. W. Johnson, E. L. Piner, K. J. Linthicum, F. Ren

Author Affiliations +

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162A (2009) https://doi.org/10.1117/12.802823
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Chemical sensors can be used to analyze a wide variety of environmental and biological gases and liquids and may need to be able to selectively detect a target analyte. Different methods, including gas chromatography (GC), chemiluminescence, selected ion flow tube (SIFT), and mass spectroscopy (MS) have been used to measure biomarkers. These methods show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor. A promising sensing technology utilizes AlGaN/GaN high electron mobility transistors (HEMTs). HEMT structures have been developed for use in microwave power amplifiers due to their high two dimensional electron gas (2DEG) mobility and saturation velocity. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. HEMT sensors can be used for detecting gases, ions, pH values, proteins, and DNA. In this paper we review recent progress on functionalizing the surface of HEMTs for specific detection of glucose, kidney marker injury molecules, prostate cancer and other common substances of interest in the biomedical field.

Citation Download Citation

B. H. Chu, B. S. Kang, H. T. Wang, C. Y. Chang, T, Lele, Y. Tseng, A. Goh, A. Sciullo, W. S. Wu, J. N. Lin, B. P. Gila, S. J. Pearton, J. W. Johnson, E. L. Piner, K. J. Linthicum, and F. Ren "AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162A (19 February 2009); https://doi.org/10.1117/12.802823

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available