16 February 2009 Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures
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We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (ρc) of 1.1×10-6 ohm-cm2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yung-Ling Lan, Yung-Ling Lan, Hung-Cheng Lin, Hung-Cheng Lin, Hsueh-Hsing Liu, Hsueh-Hsing Liu, Geng-Yen Lee, Geng-Yen Lee, Fan Ren, Fan Ren, Stephen J. Pearton, Stephen J. Pearton, Mao-Nan Chang, Mao-Nan Chang, Jen-Inn Chyi, Jen-Inn Chyi, } "Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162P (16 February 2009); doi: 10.1117/12.810165; https://doi.org/10.1117/12.810165


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