19 February 2009 Electrical defects in AlGaN and InAlN
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Compound semiconductors based on GaN have multiple functional applications. Useful compositions include GaN, and ternary and quaternary compositions of (AlGaIn)N. Defects arising from lattice mismatch, point defects, or impurities may act as electrical trapping centers and degrade device efficiency. Current-voltage, capacitance-voltage, thermal admittance spectroscopy (TAS), and deep level transient spectroscopy (DLTS) measurements are applied to characterize the defects in Al0.40Ga0.80N and In0.18Al0.82N in this report. Broad peaks with a shoulder at high temperature dominate the DLTS spectra in each of the materials. An acceptor trap associated with a dislocation appears at 340 K in AlGaN. The defect has an energy of 0.2 eV and capture cross section of 10-21 cm2. A second trap at 0.35 eV, 10-14 cm2 appears in the TAS measurements in addition to the trap at 0.2 eV. Defects in InAlN are dominated by a peak near 150 K. Two traps appear in the TAS measurements. Both traps in the InAlN are acceptors, based on a lack of field dependent emission rates using double pulse DLTS (DDLTS). The two energy levels in InAlN appear to be coupled, with only one state occupied at a time.
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D. Johnstone, Jacob H. Leach, Vladimir A. Kovalskii, Qian Fan, Jingqiao Xie, Hadis Morkoç, "Electrical defects in AlGaN and InAlN", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162R (19 February 2009); doi: 10.1117/12.815020; https://doi.org/10.1117/12.815020


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