12 February 2009 MgZnO:P homoepitaxy by pulsed laser deposition: pseudomorphic layer-by-layer growth and high electron mobility
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Abstract
Homoepitaxial ZnO thin films doped with phosphorus (0.01% to 1% P) and/or alloyed with magnesium (1% to 4% Mg) show pseudomorphic growth with compressive or tensile strain in dependence on the dopant concentration. The structural quality of the used O-face ZnO(001) substrates was inspected by the rocking curves of the symmetric (002) and the skew-symmetric (101) peaks. Preselection of the substrate batches by the supplier decreased the twist dislocation density and increased the structural homogeneity within the batches considerably. TEM cross sections show increasing density of c-plane defects with increasing phosphorus concentration in the films. ZnO(002) rocking curves of MgZnO:P films on ZnO were as narrow as 27 arcsec with a FWHM of the substrate peak of 23 arcsec. The in-plane lattice match was confirmed for all dopant concentrations by HR-XRD triple axis scans of the (002) and (101) peaks. The results show the balance between tensile strain induced by Mg and compressive strain by P in ZnO. Two-dimensional growth with terrace-like surface structure is most prominent for the Mg-alloyed films without P. High electron mobilities up to 190 cm2/Vs at 300K and up to 800 cm2/Vs at 70 K were found in the homoepitaxial MgZnO:P thin films.
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M. Lorenz, M. Lorenz, M. Brandt, M. Brandt, G. Wagner, G. Wagner, H. Hochmuth, H. Hochmuth, G. Zimmermann, G. Zimmermann, H. von Wenckstern, H. von Wenckstern, M. Grundmann, M. Grundmann, } "MgZnO:P homoepitaxy by pulsed laser deposition: pseudomorphic layer-by-layer growth and high electron mobility", Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170N (12 February 2009); doi: 10.1117/12.817017; https://doi.org/10.1117/12.817017
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