12 February 2009 ICP etching of ZnO in BCl3/SF6 gas mixtures
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Abstract
ZnO epitaxial layers were plasma etched using BCl3/SF6 gas mixtures in an Oxford Instruments System 100 ICP 180. Etch rates were studied as a function of gas composition, pressure, ICP coil power and RF power. The ZnO etch rate in pure BCl3 at a pressure of 10 mTorr, RF power of 350W, and ICP power of 1000W was ~1175 Å/min (-1000V bias). The etch rate increased with increasing SF6 percentage in the flow, and for the same conditions in pure SF6 the etch rate was ~1350 Å/min (-820V bias).
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Karen J. Nordheden, Bogdan A. Pathak, John L. Alexander, "ICP etching of ZnO in BCl3/SF6 gas mixtures", Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170Q (12 February 2009); doi: 10.1117/12.817016; https://doi.org/10.1117/12.817016
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