ICP etching of ZnO in BCl3/SF6 gas mixtures

Karen J. Nordheden; Bogdan A. Pathak; John L. Alexander

doi:10.1117/12.817016

12 February 2009 ICP etching of ZnO in BCl₃/SF₆ gas mixtures

Karen J. Nordheden, Bogdan A. Pathak, John L. Alexander

Proceedings Volume 7217, Zinc Oxide Materials and Devices IV; 72170Q (2009) https://doi.org/10.1117/12.817016
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

ZnO epitaxial layers were plasma etched using BCl₃/SF₆ gas mixtures in an Oxford Instruments System 100 ICP 180. Etch rates were studied as a function of gas composition, pressure, ICP coil power and RF power. The ZnO etch rate in pure BCl₃ at a pressure of 10 mTorr, RF power of 350W, and ICP power of 1000W was ~1175 Å/min (-1000V bias). The etch rate increased with increasing SF₆ percentage in the flow, and for the same conditions in pure SF₆ the etch rate was ~1350 Å/min (-820V bias).

Citation Download Citation

Karen J. Nordheden, Bogdan A. Pathak, and John L. Alexander "ICP etching of ZnO in BCl₃/SF₆ gas mixtures", Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170Q (12 February 2009); https://doi.org/10.1117/12.817016

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