12 February 2009 Properties of organic-inorganic hybrid thin film transistors with ZnO active layer on PES substrates
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Abstract
The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES [polyether sulfone] flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7Ω•cm, respectively. The field effect mobility (μ) and threshold voltage (VTH) of the prepared OITFT were about 0.01 cm2/V•s and 12 V, respectively. The I on/off switching ratio was about 104.
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Su Cheol Gong, Byung Chul Yoo, Ik Sub Shin, Hyungtag Jeon, Hyung-Ho Park, Ho Jung Chang, "Properties of organic-inorganic hybrid thin film transistors with ZnO active layer on PES substrates", Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170V (12 February 2009); doi: 10.1117/12.808357; https://doi.org/10.1117/12.808357
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