18 February 2009 Ge-on-silicon vertical PIN photodetectors
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Proceedings Volume 7220, Silicon Photonics IV; 72200F (2009); doi: 10.1117/12.807947
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States
Abstract
This paper reports on fabrication and characterization of two kinds of photodetectors: surface illuminated and waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of surface illuminated photodetectors is 40 GHz under 5 V reverse bias at 1.53 µm wavelength. For waveguide integrated photodetectors, the measured -3dB bandwidth at 1.53 µm wavelength under 4 V reverse bias is 42 GHz.
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Johann Osmond, Laurent Vivien, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Juliette Mangeney, Yves Lecunff, Suzanne Laval, "Ge-on-silicon vertical PIN photodetectors", Proc. SPIE 7220, Silicon Photonics IV, 72200F (18 February 2009); doi: 10.1117/12.807947; http://dx.doi.org/10.1117/12.807947
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KEYWORDS
Photodetectors

Germanium

Waveguides

Silicon

Metals

Absorption

Annealing

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